Terahertz quantum cascade lasers with copper metal-metal waveguides operating up to 178 K

Mikhail A. Belkin, Jonathan A. Fan, Sahand Hormoz, +5

Optics Express

PhotonicsThz PhotonicsTerahertz TechnologyTerahertz SpectroscopyEngineering +11

Surface emitting terahertz quantum cascade laser with a double-metal waveguide

Jonathan A. Fan, Mikhail A. Belkin, Federico Capasso, +4

Optics Express

Thz PhotonicsTerahertz DevicesPhotonicsTerahertz SpectroscopyEngineering +11

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

Fatima Husna, M. Lachab, Mahbuba Sultana, +3

IEEE Transactions on Electron Devices

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesHigh-temperature Performance +13

Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

T. Wang, Y. Ohno, M. Lachab, +4

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +12

Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

T. Wang, Hisayuki Saeki, Jie Bai, +4

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics +12

Terahertz vibrational absorption spectroscopy using microstrip-line waveguides

Matthew B. Byrne, J. E. Cunningham, Katarzyna Tych, +7

Applied Physics Letters

Thz PhotonicsOptical MaterialsTerahertz TechnologyEngineeringAbsorption Spectroscopy +17

Optical investigation of InGaN/GaN multiple quantum wells

T. Wang, Daisuke Nakagawa, M. Lachab, +2

Applied Physics Letters

PhotonicsOptical InvestigationIngan/gan Multiple QuantumEngineeringPhotoluminescence +9

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

Seongmo Hwang, D. V. Morgan, Amanda Kesler, +10

Applied Physics Express

Materials ScienceElectrical EngineeringElectronic DevicesOptical MaterialsEngineering +12

Wide-ridge metal-metal terahertz quantum cascade lasers with high-order lateral mode suppression

Jonathan A. Fan, Mikhail A. Belkin, Federico Capasso, +4

Applied Physics Letters

Thz PhotonicsTerahertz TechnologyOptical MaterialsWaveguide StructureEngineering +15

MOCVD growth of device-quality GaN on sapphire using a three-step approach

B.L Liu, M. Lachab, A Yoshikawaa, +1

Journal of Crystal Growth

Wide-bandgap SemiconductorElectrical EngineeringEngineeringMocvd GrowthApplied Physics +7