Characterization, Modeling, and Application of 10-kV SiC MOSFET

Jun Wang, Tiefu Zhao, ­Jun Li­, +4

IEEE Transactions on Electron Devices

Sic MosfetElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device +9

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Anant Agarwal, Fatima Husna, Sarah K. Haney, +1

IEEE Electron Device Letters

Electrical EngineeringSemiconductor DeviceEngineeringHigh Voltage EngineeringDrift Layer +11

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

Fatima Husna, M. Lachab, Mahbuba Sultana, +3

IEEE Transactions on Electron Devices

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesHigh-temperature Performance +13

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan, +8

Materials science forum

EngineeringPower ElectronicsSemiconductor DeviceHigh Voltage EngineeringLow Rdiff +14

Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes

Qingchun Zhang, Fatima Husna, Anant Agarwal, +1

Microelectronics Reliability

Materials EngineeringReverse PerformanceSemiconductor TechnologyEngineeringCrystalline Defects +5

Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

D. V. Morgan, Mahbuba Sultana, Fatima Husna, +5

Applied Physics Express

Electrical EngineeringSemiconductor DeviceEngineering+1.5 VApplied Physics +10

State of the Art 10 kV NMOS Transistors

Mrinal K. Das, Robert Callanan, D.C. Capell, +7

Low-power ElectronicsKv Nmos TransistorsElectrical EngineeringEngineeringPower Device +9

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Brett Hull, Charlotte Jonas, Sei‐Hyung Ryu, +8

Materials science forum

Large AreaElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering +11

10 kV SiC MOSFET Based Boost Converter

Jun Wang, Jun Li, Xiaohu Zhou, +5

Sic MosfetElectrical EngineeringEngineeringKv Sic MosfetsHigh Voltage Engineering +11

4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

Qingchun Zhang, Al Burk, Fatima Husna, +5

IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

SemiconductorsSic WafersElectrical EngineeringStable Sic BjtsEngineering +13