Fatima Husna

Characterization, Modeling, and Application of 10-kV SiC MOSFET

Jun Wang, Tiefu Zhao, ­Jun Li­ et al. · IEEE Transactions on Electron Devices · 2008 · 382 citations

Sic Mosfet, Electrical Engineering, Engineering +11

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Anant Agarwal, Fatima Husna, Sarah K. Haney et al. · IEEE Electron Device Letters · 2007 · 282 citations

Electrical Engineering, Semiconductor Device, Engineering +13

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

Fatima Husna, M. Lachab, Mahbuba Sultana et al. · IEEE Transactions on Electron Devices · 2012 · 93 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum · 2008 · 55 citations

Engineering, Power Electronics, Semiconductor Device +16

Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes

Qingchun Zhang, Fatima Husna, Anant Agarwal et al. · Microelectronics Reliability · 2008 · 31 citations

Materials Engineering, Reverse Performance, Semiconductor Technology +7