Robert Callanan - Concepedia

Author

Robert Callanan

Wolfspeed, Inc. (United States)

Also Known As

R. Callanan, R.J. Callanan, Robert Callanan

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Wolfspeed, Inc. (United States)Cree (China)DEVCOM Army Research Laboratory Triangle North Carolina State University

About

Robert Callanan is an author at Wolfspeed, Inc. (United States) specializing in electrical engineering, engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	26	1.3K
2	Electrical Engineering	20	26	1.3K
3	Applied Physics	13	17	540
4	Materials Engineering	2	2	78
5	Computer Engineering	1	1	55

Robert Callanan

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Characterization, Modeling, and Application of 10-kV SiC MOSFET Jun Wang, Tiefu Zhao, Jun Li, IEEE Transactions on Electron Devices Sic MosfetElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2008	382
SiC Power Devices for Microgrids Qingchun Zhang, Robert Callanan, Mrinal K. Das, IEEE Transactions on Power Electronics Electrical EngineeringEngineeringDc MicrogridsPower DevicePower Devices	2010	174
Recent progress in SiC DMOSFETs and JBS diodes at Cree Robert Callanan, Anant Agarwal, Albert A. Burk, EngineeringPower DevicesKv Sic DmosfetsPower Electronic SystemsPower Electronics	2008	94
10-kV SiC MOSFET-Based Boost Converter Jun Wang, Xiaohu Zhou, Jun Li, IEEE Transactions on Industry Applications Sic Mosfet10-Kv Silicon CarbideElectrical EngineeringEngineeringPower Device	2009	69
12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC Qingchun Zhang, Mrinal K. Das, Joe Sumakeris, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2008	64
Design and Characterization of High-Voltage 4H-SiC p-IGBTs Qingchun Zhang, Alex Q. Huang, Jun Wang, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringHigh-voltage 4H-sic P-igbtsEngineeringPower Device	2008	56
A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching Mrinal K. Das, Q. Jon Zhang, Robert Callanan, Materials science forum EngineeringPower ElectronicsSemiconductor DeviceHigh Voltage EngineeringLow Rdiff	2008	55
SiC power devices for Smart Grid systems John W. Palmour, J. Q. Zhang, Mrinal K. Das, Electrical EngineeringEngineeringSmart GridPower DevicesNanoelectronics	2010	42
20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems Brett Hull, Mrinal K. Das, F. Husna, Electrical EngineeringEngineeringPower Device4H-sic DmosfetsNanoelectronics	2009	41
Third quadrant behavior of SiC MOSFETs Robert Callanan, Julius Rice, John W. Palmour Negative Gate BiasElectrical EngineeringSemiconductor DeviceEngineeringThird Quadrant Behavior	2013	37

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