Albert A. Burk

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 293 citations

Engineering, Electrical Engineering, Materials Science +17

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Vipindas Pala, Edward Van Brunt, Lin Cheng et al. · 2014 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Robert Callanan, Anant Agarwal, Albert A. Burk et al. · 2008 · 97 citations

Engineering, Electrical Engineering, Materials Science +16

The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology

Albert A. Burk, L.B. Rowland · Journal of Crystal Growth · 1996 · 95 citations

Engineering, Materials Engineering, Materials Science +14

SiC and GaN wide bandgap semiconductor materials and devices

Albert A. Burk, Michael O’Loughlin, R.R. Siergiej et al. · Solid-State Electronics · 1999 · 90 citations

Engineering, Materials Science, Physics +12