Vipindas Pala

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 293 citations

Engineering, Electrical Engineering, Materials Science +17

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki et al. · IEEE Transactions on Electron Devices · 2017 · 156 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Vipindas Pala, Edward Van Brunt, Lin Cheng et al. · 2014 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

27 kV, 20 A 4H-SiC n-IGBTs

Edward Van Brunt, Lin Cheng, Michael O’Loughlin et al. · Materials science forum · 2015 · 142 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications

Jeffrey B. Casady, Vipindas Pala, Daniel J. Lichtenwalner et al. · PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of · 2015 · 88 citations

Engineering, Electrical Engineering, Microelectronics +16