Michael O’Loughlin

Author

Michael O’Loughlin

Also Known As

M O’Loughlin, M. J. O'Loughlin, M. J. O’Loughlin, M. O'Loughlin, M. O’Loughlin, M.J O'Loughlin, M.J. O'Loughlin, Michael J. O'Loughlin, Michael J. O'Loughlin, Michael J. O’Loughlin

240

Publications

4.8K

Citations

H-Index

166

Concepts

All Affiliations

Cree (China)Wolfspeed, Inc. (United States)DEVCOM Army Research Laboratory Carnegie Mellon University United States Naval Research Laboratory

About

Michael O’Loughlin is an author at Cree (China) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	56	2.7K
2	Education	10	10	607
3	Language Studies	4	4	467
4	Humanities	2	2	64
5	Arts	1	1	20

Michael O’Loughlin

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
Rethinking science education: Beyond piagetian constructivism toward a sociocultural model of teaching and learning Michael O’Loughlin Journal of Research in Science Teaching Inquiry-based LearningScience EducationSociocultural ModelEducational PsychologyScience Teaching	1992	380
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV John W. Palmour, Lin Cheng, Vipindas Pala, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2014	282
Lifetime-limiting defects in n− 4H-SiC epilayers P. B. Klein, B. V. Shanabrook, S. Huh, Applied Physics Letters SemiconductorsDeep Trap SpectraSemiconductor TechnologyEngineeringPhysics	2006	215
10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems Vipindas Pala, Edward Van Brunt, Lin Cheng, Semiconductor TechnologyElectrical EngineeringTransmission SystemsEngineeringKv Sic Mosfets	2014	151
27 kV, 20 A 4H-SiC n-IGBTs Edward Van Brunt, Lin Cheng, Michael O’Loughlin, Materials science forum Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringChip Size	2015	142
Structure of the carrot defect in 4H-SiC epitaxial layers Mourad Benamara, Xuan Zhang, Marek Skowroński, Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringStair-rod DislocationPlanar Faults	2005	94
SiC and GaN wide bandgap semiconductor materials and devices Albert A. Burk, Michael O’Loughlin, R.R. Siergiej, Solid-State Electronics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	1999	90
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das, Materials science forum EngineeringSemiconductor DeviceNanoelectronicsElectronic PackagingPower Electronic Devices	2006	90
Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2008	89
22 kV, 1 cm<sup>2</sup>, 4H-SiC n-IGBTs with improved conductivity modulation Edward Van Brunt, Scott T. Allen, Albert A. Burk, EngineeringImproved Conductivity ModulationPower Electronic SystemsPower ElectronicsSemiconductor Device	2014	77

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