Edward Van Brunt

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 282 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Vipindas Pala, Edward Van Brunt, Lin Cheng et al. · 2014 · 151 citations

Semiconductor Technology, Electrical Engineering, Transmission Systems +15

27 kV, 20 A 4H-SiC n-IGBTs

Edward Van Brunt, Lin Cheng, Michael O’Loughlin et al. · Materials science forum · 2015 · 142 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +15

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

Woongje Sung, Edward Van Brunt, B. Jayant Baliga et al. · IEEE Electron Device Letters · 2011 · 137 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same <italic>dv/dt</italic> Conditions

Kasunaidu Vechalapu, Subhashish Bhattacharya, Edward Van Brunt et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2016 · 107 citations

Electrical Engineering, Engineering, Power Device +9