Daniel J. Lichtenwalner

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 282 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigue

R. Dat, Daniel J. Lichtenwalner, Orlando Auciello et al. · Applied Physics Letters · 1994 · 181 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, Jimin Huang et al. · Applied Physics Letters · 2008 · 177 citations

Device Modeling, Electrical Engineering, Interface Dipole Model +11

Growth and characterization of cubic boron nitride thin films

Daniel J. Kester, K. S. Ailey, Daniel J. Lichtenwalner et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1994 · 146 citations

Materials Science, Cubic Boron, Boron Nitride +13

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Manuel Quevedo-López, H.C. Wen et al. · Applied Physics Letters · 2006 · 104 citations

Materials Science, Materials Engineering, Electrical Engineering +15