Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, +2

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringGate Threshold VoltagePower Electronics Applications +13

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, +4

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineering600-V Breakdown VoltagePower Device +11

A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

M. Kitagawa, Ichiro Omura, Shunsuke Hasegawa, +2

Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +10

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi, +4

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsOptimized Field-plate Structure +8

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, +2

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorEngineeringPower Electronics ApplicationsPower DevicesExtreme Bandgap Semiconductors +19

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, +3

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringSurface Defect ChargeNanoelectronics +9

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura, +1

Solid-State Electronics

Device ModelingElectrical EngineeringTheoretical Limit EstimationEngineeringPower Device +5

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi, +4

IEEE Electron Device Letters

Electrical EngineeringDemonstrated CircuitEngineeringPower DeviceEnergy Conversion +7

General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm

Koutarou Miyazaki, Seiya Abe, Masanori Tsukuda, +4

IEEE Transactions on Industry Applications

EngineeringVlsi DesignPower Optimization (Eda)Computer ArchitectureArbitrary Gate Waveform +17

Power Semiconductor Devices for Hybrid, Electric, and Fuel Cell Vehicles

Z. John Shen, Ichiro Omura

Proceedings of the IEEE

Sic DevicesEngineeringPower DevicesHybrid Electric VehiclePower Electronic Systems +16