Ichiro Omura

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 550 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2003 · 401 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

M. Kitagawa, Ichiro Omura, Shunsuke Hasegawa et al. · 2002 · 234 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 223 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki et al. · IEEE Transactions on Electron Devices · 2017 · 153 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics Applications +21