Concepedia

Author

Wataru Saito

Toshiba (Japan)ORCID

Also Known As

Ichiro Omura Wataru Saito, Saito, Wataru, T. Takakura, Takashi Kitaoka, W. Saito, WATARU SAITO, Wataru SAITO, Wataru Saito, Wataru Saito Wataru Saito

217

Publications

3.8K

Citations

27

H-Index

54

Concepts

All Affiliations

Toshiba (Japan)Kyushu UniversityTokyo Institute of TechnologyMitsubishi Electric (Japan)Kyushu Institute of Technology
WS

About

Wataru Saito is an author at Toshiba (Japan) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

26

53

3.1K

2

Applied Physics

23

33

2.4K

3

Chemistry

3

3

84

4

Chemical Engineering

2

2

63

5

Computer Engineering

1

1

29

Wataru Saito

×

60

Publications

3.2K

Citations

26

H-Index

YearCitations

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi,

IEEE Transactions on Electron Devices

2006

550

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi,

IEEE Transactions on Electron Devices

2003

401

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi,

IEEE Transactions on Electron Devices

2007

223

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada,

IEEE Transactions on Electron Devices

2005

150

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura,

Solid-State Electronics

2004

131

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta,

IEEE Electron Device Letters

2010

125

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi,

IEEE Electron Device Letters

2008

125

Design Optimization of High Breakdown Voltage AlGaN–GaN Power HEMT on an Insulating Substrate for<tex>$R_rm ONAhbox --V_B$</tex>Tradeoff Characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada,

IEEE Transactions on Electron Devices

2004

91

High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada,

IEEE Transactions on Electron Devices

2004

74

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

Joseph P. Kozak, Ruizhe Zhang, Qihao Song,

IEEE Electron Device Letters

2021

74

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