Wataru Saito

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 550 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2003 · 401 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 223 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2005 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura et al. · Solid-State Electronics · 2004 · 131 citations

Device Modeling, Electrical Engineering, Theoretical Limit Estimation +7