Yoshiharu Takada

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 550 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2003 · 401 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2005 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Design Optimization of High Breakdown Voltage AlGaN–GaN Power HEMT on an Insulating Substrate for<tex>$R_rm ONAhbox --V_B$</tex>Tradeoff Characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2004 · 91 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2004 · 74 citations

Wide-bandgap Semiconductor, Electrical Engineering, Dc–dc Converter Application +14