Masahiko Kuraguchi

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2003 · 403 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2005 · 151 citations

Engineering, Electrical Engineering, Materials Science +17

Design Optimization of High Breakdown Voltage AlGaN–GaN Power HEMT on an Insulating Substrate for<tex>$R_rm ONAhbox --V_B$</tex>Tradeoff Characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2004 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2004 · 74 citations

Engineering, Electrical Engineering, Materials Science +17