IEEE Transactions on Electron Devices · 2003 · 403 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageCurrent DensityGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHigh-electron-mobility TransistorsHigh-voltage BreakdownPower Electronics Devices
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13
High breakdown GaN HEMT with overlapping gate structure
N.-Q. Zhang, S. Keller, Giacinta Parish et al. · IEEE Electron Device Letters · 2000 · 308 citations
10-W/mm AlGaN-GaN HFET with a field modulating plate
Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto et al. · IEEE Electron Device Letters · 2003 · 274 citations