Hiromichi Ohashi

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2003 · 401 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura et al. · Solid-State Electronics · 2004 · 131 citations

Device Modeling, Electrical Engineering, Theoretical Limit Estimation +7

SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems

Yukihiko Sato, Yasunori Tanaka, Akiyoshi Fukui et al. · IEEE Transactions on Power Electronics · 2013 · 108 citations

Electrical Engineering, Engineering, Controllable Interruption Voltage +12

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada et al. · Solid-State Electronics · 2006 · 96 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Diamond Schottky-pn diode with high forward current density and fast switching operation

Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi et al. · Applied Physics Letters · 2009 · 89 citations

Engineering, Pn Diode, Optoelectronic Devices +16