Hiromichi Ohashi - Concepedia

Author

Hiromichi Ohashi

Toshiba (Japan)

Also Known As

H Ohashi, H. Ohashi, Hinari Ohashi, Hiromichi OHASHI, Hiromichi Ohashi, Hiromichi Ohashi Hiromichi Ohashi

224

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)National Institute of Advanced Industrial Science and Technology Tokyo Institute of Technology Kyushu Institute of Technology NTT (Japan)

About

Hiromichi Ohashi is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	78	2.6K
2	Electrical Engineering	27	73	2.5K
3	Applied Physics	22	37	1.6K
4	Computer Engineering	10	12	338
5	Chemical Engineering	1	1	11

Hiromichi Ohashi

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineering600-V Breakdown VoltagePower Device	2003	401
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device Wataru Saito, Ichiro Omura, Tsuneo Ogura, Solid-State Electronics Device ModelingElectrical EngineeringTheoretical Limit EstimationEngineeringPower Device	2004	131
SiC-SIT Circuit Breakers With Controllable Interruption Voltage for 400-V DC Distribution Systems Yukihiko Sato, Yasunori Tanaka, Akiyoshi Fukui, IEEE Transactions on Power Electronics Electrical EngineeringEngineeringControllable Interruption VoltagePower DeviceSic-sit Circuit Breakers	2013	108
High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringAluminum Gallium NitrideApplied Physics	2006	96
Diamond Schottky-pn diode with high forward current density and fast switching operation Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi, Applied Physics Letters EngineeringPn DiodeOptoelectronic DevicesDiamond Schottky-pn DiodeSemiconductor Device	2009	89
Oscillation effects in IGBT's related to negative capacitance phenomena Ichiro Omura, Wolf Fïchtner, Hiromichi Ohashi IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringGate Voltage Oscillations	1999	68
Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures Akira Nakajima, Pucheng Liu, Masahiko Ogura, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringTwo-dimensional Hole GasesSemiconductorsGan/algan/gan Double Heterostructures	2014	58
Negative electron affinity of diamond and its application to high voltage vacuum power switches Daisuke Takeuchi, Satoshi Koizumi, Toshiharu Makino, physica status solidi (a) Electron Emission PropertiesDiamond-like CarbonElectrical EngineeringEngineeringPhysics	2013	56
GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, IET Power Electronics Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringNch Mosfets	2018	51
Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept Ichiro Omura, T. Ogura, K. Sugiyama, Electrical EngineeringEngineeringHigh Voltage ApplicationsNanoelectronicsElectronic Engineering	2002	49

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