Shuichi Yagi

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.2K citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada et al. · Solid-State Electronics · 2006 · 96 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Low cost high voltage GaN polarization superjunction field effect transistors

H. Kawai, Shuichi Yagi, Seishiro Hirata et al. · physica status solidi (a) · 2017 · 48 citations

Wide-bandgap Semiconductor, Gan Power, Electrical Engineering +12

High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO₂/SiN Gate Insulator

Shuichi Yagi, Mitsuaki Shimizu, Hajime Okumura et al. · Japanese Journal of Applied Physics · 2007 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +12

Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida et al. · Journal of Applied Physics · 2012 · 16 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13