Low cost high voltage GaN polarization superjunction field effect transistors

Abstract

A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled-up PSJ-FETs from POWDEC KK, are also discussed. The article also presents hard-switching characteristics of 400–800 V boost converter, constructed using a PSJ-FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.