Fumihiko Nakamura - Concepedia

Author

Fumihiko Nakamura

Also Known As

F NAKAMURA, F Nakamura, F. NAKAMURA, F. Nakamura, Fumihiko NAKAMURA, Fumihiko Nakamura, Fumihiko Nakamura Fumihiko Nakamura, Nakamura, F., Nakamura, Fumihiko

260

Publications

Citations

H-Index

Concepts

All Affiliations

Hiroshima University Fujitsu (Japan)Sony (Taiwan)Kurume Institute of Technology Nagoya University

About

Fumihiko Nakamura is an author at Hiroshima University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	41	1.4K
2	Applied Physics	21	39	1.4K
3	Electrical Engineering	11	12	650
4	Natural Sciences	8	8	135
5	Chemistry	1	1	26

Fumihiko Nakamura

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Band lineup for a GaInP/GaAs heterojunction measured by a high-gain <i>N</i> <i>p</i> <i>n</i> heterojunction bipolar transistor grown by metalorganic chemical vapor deposition Takashi Kobayashi, K. Taira, Fumihiko Nakamura, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductor MaterialsδEc ValueSemiconductor Device	1989	166
AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation T. Mizutani, Masafumi Ito, Shigeru Kishimoto, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2007	151
Electric-field-induced metal maintained by current of the Mott insulator Ca2RuO4 Fumihiko Nakamura, Mariko Sakaki, Yuya Yamanaka, Scientific Reports EngineeringSemiconductor DeviceNanoelectronicsElectronic StatesSuperconductivity	2013	135
Electrical transport properties and crystal structure of LiZnAs K. Kuriyama, Fumihiko Nakamura Physical review. B, Condensed matter Materials ScienceEnergy Band GapCrystal StructureSolid-state IonicEngineering	1987	74
AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition Fumihiko Nakamura, Shigeki Hashimoto, Masaki Hara, Journal of Crystal Growth Materials ScienceMaterials EngineeringAluminium NitrideEngineeringCorrosion	1998	62
AlN/GaN insulated gate heterostructure FET withregrown <i>n</i> <sup>+</sup> GaN ohmic contact H. Kawai, Masaki Hara, Fumihiko Nakamura, Electronics Letters	1998	60
Charge stripe order near the surface of 12-percent doped La2−xSrxCuO4 Hua Wu, M. Buchholz, C. Trabant, Nature Communications High-tc SuperconductivityEngineeringPhysicsSurface ScienceApplied Physics	2012	55
Low cost high voltage GaN polarization superjunction field effect transistors H. Kawai, Shuichi Yagi, Seishiro Hirata, physica status solidi (a) Wide-bandgap SemiconductorGan PowerElectrical EngineeringEngineeringHigh Voltage Engineering	2017	48
Current-induced strong diamagnetism in the Mott insulator Ca <sub>2</sub> RuO <sub>4</sub> Chanchal Sow, Shingo Yonezawa, Sota Kitamura, Science	2017	45
Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer Takashi Mizutani, Hiroyuki Yamada, Shigeru Kishimoto, Journal of Applied Physics Wide-bandgap SemiconductorThin Gan LayerElectrical EngineeringP-ingan Cap LayerEngineering	2013	44

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