Fumihiko Nakamura

Band lineup for a GaInP/GaAs heterojunction measured by a high-gain <i>N</i> <i>p</i> <i>n</i> heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

Takashi Kobayashi, K. Taira, Fumihiko Nakamura et al. · Journal of Applied Physics · 1989 · 166 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +16

AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation

T. Mizutani, Masafumi Ito, Shigeru Kishimoto et al. · IEEE Electron Device Letters · 2007 · 151 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Electric-field-induced metal maintained by current of the Mott insulator Ca2RuO4

Fumihiko Nakamura, Mariko Sakaki, Yuya Yamanaka et al. · Scientific Reports · 2013 · 135 citations · Full text

Engineering, Semiconductor Device, Nanoelectronics +16

Electrical transport properties and crystal structure of LiZnAs

K. Kuriyama, Fumihiko Nakamura · Physical review. B, Condensed matter · 1987 · 74 citations

Materials Science, Energy Band Gap, Crystal Structure +11

AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition

Fumihiko Nakamura, Shigeki Hashimoto, Masaki Hara et al. · Journal of Crystal Growth · 1998 · 62 citations

Materials Science, Materials Engineering, Aluminium Nitride +9