H. Kawai

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.3K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Band lineup for a GaInP/GaAs heterojunction measured by a high-gain <i>N</i> <i>p</i> <i>n</i> heterojunction bipolar transistor grown by metalorganic chemical vapor deposition

Takashi Kobayashi, K. Taira, Fumihiko Nakamura et al. · Journal of Applied Physics · 1989 · 166 citations

Engineering, Electrical Engineering, Materials Science +17

GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Akira Nakajima, Yasunobu Sumida, Mahesh H. Dhyani et al. · IEEE Electron Device Letters · 2011 · 138 citations

Engineering, Electrical Engineering, Materials Science +16

High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface

Akira Nakajima, Yasunobu Sumida, Mahesh H. Dhyani et al. · Applied Physics Express · 2010 · 117 citations

Engineering, Materials Science, Physics +17

Doublet state of resonantly coupled AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

H. Kawai, Junichi H. Kaneko, N. Watanabe · Journal of Applied Physics · 1985 · 111 citations

Engineering, Materials Engineering, Materials Science +17