Edward Beam

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.3K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt et al. · IEEE Journal of Solid-State Circuits · 1998 · 220 citations

Engineering, Electrical Engineering, Analog Electronics +16

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

U. Chowdhury, J. L. Jiménez, C. Lee et al. · IEEE Electron Device Letters · 2008 · 159 citations

Engineering, Electrical Engineering, Materials Science +16

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

Yan Zhou, J. Anaya, James W. Pomeroy et al. · ACS Applied Materials & Interfaces · 2017 · 151 citations

Engineering, Materials Engineering, Materials Science +17

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 137 citations

Engineering, Electrical Engineering, Materials Science +16