Edward Beam - Concepedia

Author

Edward Beam

Also Known As

Beam, Edward, E A Beam, E A Beam III, E Beam, E. A. Beam, E. A. Beam III, E. Beam, E.A. Beam, EDWARD A. BEAM III, EDWARD BEAM

140

Publications

4.5K

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Qorvo (United States)University of Notre Dame Virginia Tech Massachusetts Institute of Technology

About

Edward Beam is an author at Texas Instruments (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	67	3.8K
2	Applied Physics	32	67	3.8K
3	Natural Sciences	3	3	81
4	Chemistry	2	2	67
5	Computer Engineering	2	2	79

Edward Beam

Publications

4.3K

Citations

H-Index

Page 1

	Year	Citations
The 2018 GaN power electronics roadmap Hiroshi Amano, Yannick Baines, Edward Beam, Journal of Physics D Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2018	1.2K
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt, IEEE Journal of Solid-State Circuits Resonant-tunneling DiodesData ConverterMixed-signal Integrated CircuitAnalog DesignVersatile Technology	1998	220
TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs U. Chowdhury, J. L. Jiménez, C. Lee, IEEE Electron Device Letters Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2008	159
Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling Yan Zhou, J. Anaya, James W. Pomeroy, ACS Applied Materials & Interfaces	2017	145
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ Jia Guo, Guowang Li, Faiza Faria, IEEE Electron Device Letters Wide-bandgap SemiconductorMbe-regrown OhmicsElectrical EngineeringSemiconductor TechnologyEngineering	2012	133
ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance Andrew J. Green, J. Gillespie, Robert Fitch, IEEE Electron Device Letters SemiconductorsGan TemplateElectrical EngineeringElectronic DevicesEngineering	2019	120
Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ Dong Seup Lee, Han Wang, Allen Hsu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineering\Rm TGan Hemts	2013	114
RTD/HFET low standby power SRAM gain cell J.P.A. van der Wagt, Alan Seabaugh, Edward Beam IEEE Electron Device Letters Low-power ElectronicsNon-volatile MemoryElectrical EngineeringIntegrated RtdEngineering	1998	114
Gate-recessed integrated E/D GaN HEMT technology with f<sub>T</sub>/f<sub>max</sub> >300 GHz Michael L. Schuette, A. Ketterson, Bo Song, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringD-mode Devices	2013	106
Physical degradation of GaN HEMT devices under high drain bias reliability testing S.Y. Park, Carlo Floresca, Uttiya Chowdhury, Microelectronics Reliability Electrical EngineeringEngineeringApplied PhysicsGan Hemt DevicesGan Power Device	2009	98

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