Jia Guo

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · Japanese Journal of Applied Physics · 2013 · 89 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang, Guowang Li, Jai Verma et al. · IEEE Electron Device Letters · 2011 · 85 citations

Gan-based Hemts, Semiconductor Technology, Electrical Engineering +9

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Guowang Li, Debdeep Jena, Ronghua Wang et al. · IEEE Electron Device Letters · 2013 · 74 citations

Semiconductors, Materials Engineering, Electrical Engineering +11