Zongyang Hu

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · IEEE Electron Device Letters · 2018 · 300 citations

Materials Engineering, Electrical Engineering, Engineering +14

Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/$R_{\text{on,sp}}$ of up to 0.95 GW/cm²

Wenshen Li, Kazuki Nomoto, Zongyang Hu et al. · IEEE Electron Device Letters · 2019 · 283 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song et al. · Applied Physics Letters · 2015 · 190 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Kazuki Nomoto, Bo Song, Zongyang Hu et al. · IEEE Electron Device Letters · 2015 · 187 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10