Kazuki Nomoto

Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · IEEE Electron Device Letters · 2018 · 310 citations

Engineering, Electrical Engineering, Materials Science +14

Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/$R_{\text{on,sp}}$ of up to 0.95 GW/cm²

Wenshen Li, Kazuki Nomoto, Zongyang Hu et al. · IEEE Electron Device Letters · 2019 · 293 citations

Engineering, Electrical Engineering, Materials Engineering +14

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song et al. · Applied Physics Letters · 2015 · 200 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Kazuki Nomoto, Bo Song, Zongyang Hu et al. · IEEE Electron Device Letters · 2015 · 193 citations

Engineering, Electrical Engineering, Materials Science +15

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Mingda Zhu, Bo Song, Meng Qi et al. · IEEE Electron Device Letters · 2015 · 184 citations · Full text

Engineering, Electrical Engineering, Materials Science +15