IEEE Electron Device Letters · 2015 · 184 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilityField-effect TransistorsIii-v SemiconductorsWide Band Gap SemiconductorsBreakdown MechanismsBreakdown VoltageGallium Nitride Power DevicesJunction BreakdownSchottky Barrier CharacteristicsSchottky Barrier DiodesSchottky Barriers
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</sub> (5.12 mQ · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), a low turn-ON voltage (<; 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</sub> of 727 MW · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . The record high BV of 1.9 kV is attributed to the dual field-plate structure.
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Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 260 citations
GaN-on-Si Vertical Schottky and p-n Diodes
Yuhao Zhang, Min Sun, Daniel Piedra et al. · IEEE Electron Device Letters · 2014 · 182 citations