E. Kohn

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Mingda Zhu, Bo Song, Meng Qi et al. · IEEE Electron Device Letters · 2015 · 184 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Diamond MEMS — a new emerging technology

E. Kohn, P. Gluche, M. Adamschik · Diamond and Related Materials · 1999 · 166 citations

Engineering, Electrical Engineering, Materials Science +12

Testing the Temperature Limits of GaN-Based HEMT Devices

David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 155 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 139 citations

Engineering, Materials Science, Physics +17

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 139 citations

Engineering, Materials Engineering, Materials Science +12