Meng Qi

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song et al. · Applied Physics Letters · 2015 · 190 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Kazuki Nomoto, Bo Song, Zongyang Hu et al. · IEEE Electron Device Letters · 2015 · 187 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Mingda Zhu, Bo Song, Meng Qi et al. · IEEE Electron Device Letters · 2015 · 182 citations · Full text

Recessed Anodes, Electrical Engineering, Engineering +10

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

Patrick Waltereit, O. Brandt, A. Trampert et al. · Applied Physics Letters · 1999 · 116 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Novel gate-recessed vertical InAs/GaSb TFETs with record high I&lt;inf&gt;ON&lt;/inf&gt; of 180 &amp;#x03BC;A/&amp;#x03BC;m at V&lt;inf&gt;DS&lt;/inf&gt; &amp;#x003D; 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12