Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-absorption Modulators

Berardi Sensale‐Rodriguez, Rusen Yan, Subrina Rafique, +9

Nano Letters

Thz PhotonicsTerahertz TechnologyEngineeringOptoelectronic DevicesTerahertz Photonics +17

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song, +7

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +10

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Kazuki Nomoto, Bo Song, Zongyang Hu, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan P-n Diodes +8

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Mingda Zhu, Bo Song, Meng Qi, +8

IEEE Electron Device Letters

Recessed AnodesElectrical EngineeringEngineeringHigh Voltage EngineeringDual Field-plate Structure +8

Terahertz imaging employing graphene modulator arrays

Berardi Sensale‐Rodriguez, Subrina Rafique, Rusen Yan, +5

Optics Express

Graphene Electro-absorption ModulatorsThz PhotonicsPhotonicsElectrical EngineeringTerahertz Spectroscopy +13

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

Zongyang Hu, Kazuki Nomoto, Meng Qi, +5

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +11

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Meng Qi, Guowang Li, Satyaki Ganguly, +8

Applied Physics Letters

SemiconductorsAluminium NitrideElectrical EngineeringElectronic DevicesEngineering +12

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

Wenshen Li, Huili Grace Xing, Kazuki Nomoto, +7

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorGan Vertical Trench-mosfetsElectrical EngineeringEngineeringGan Vertical Trench-mosfet +7

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Kazuki Nomoto, Zhenqi Hu, Bo Song, +11

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +9

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Meng Qi, Kazuki Nomoto, Mingda Zhu, +11

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +7