Guangle Zhou

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Rui Li, Yeqing Lu, Guangle Zhou et al. · IEEE Electron Device Letters · 2012 · 137 citations

Engineering, Electrical Engineering, Materials Science +16

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Yeqing Lu, Guangle Zhou, Rui Li et al. · IEEE Electron Device Letters · 2012 · 126 citations

Engineering, Electrical Engineering, Electronic Materials +16

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2012 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2011 · 71 citations

Engineering, Electrical Engineering, Materials Science +14