IEEE Electron Device Letters · 2012 · 126 citations · 11 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsThin-film TransistorsWide Band Gap SemiconductorsCurrent-voltage RelationsEquivalent Oxide ThicknessField-effect Transistor SimulationGate Oxide Thickness EffectsGate-dependent Current-voltage BehaviorMetal-oxide-semiconductor Field-effect Transistor ModelingSubthreshold SwingTunneling Field-effect Transistors
The current-voltage characteristics of AlGaSb/InAs staggered-gap n-channel tunnel field-effect transistors are simulated in a geometry in which the gate electric field is oriented to be in the same direction as the tunnel junction internal field. It is shown that this geometry can also support low-voltage operation and low subthreshold swing. In the absence of a simple analytic theory for this transistor to allow direct analytic comparisons, two-dimensional numerical simulations are used to explore the electrostatic and geometrical design considerations including dependence on gate length, gate underlap, gate undercut, and equivalent oxide thickness.
11
Low-subthreshold-swing tunnel transistors
Qin Zhang, Wei Zhao, Alan Seabaugh · IEEE Electron Device Letters · 2006 · 652 citations
Prospect of tunneling green transistor for 0.1V CMOS
Chenming Hu, Pratik Patel, Anupama Bowonder et al. · 2010 · 112 citations
Engineering, Computer Engineering, Electrical Engineering +17