Soo Doo Chae

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Wan Sik Hwang, Maja Remškar, Rusen Yan et al. · Applied Physics Letters · 2012 · 279 citations · Full text

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Rui Li, Yeqing Lu, Guangle Zhou et al. · IEEE Electron Device Letters · 2012 · 136 citations

Device Modeling, Electrical Engineering, Engineering +8

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Yeqing Lu, Guangle Zhou, Rui Li et al. · IEEE Electron Device Letters · 2012 · 123 citations

Device Modeling, Algasb/inas Tfets, Electrical Engineering +11

Charge transport mechanism in metal-nitride-oxide-silicon structures

K. A. Nasyrov, V. A. Gritsenko, M.K. Kim et al. · IEEE Electron Device Letters · 2002 · 62 citations

Electrical Engineering, Charge Transport Mechanism, Engineering +10

InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

Rui Li, Yeqing Lu, Soo Doo Chae et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 42 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10