Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 43 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsQuantum TunnelingSemiconductor HeterostructuresSemiconductor PhysicsTunnelingDifferential ResistanceInterface TrapsSubthreshold SwingTrapsTunnel JunctionsTunneling BarriersTunneling CurrentTunneling Phenomena
Abstract The first fabrication of a III‐V tunnel field‐effect transistor (TFET) with tunneling directed perpendicular to the gate is reported. This new transistor geometry utilizes an InAs/Al 0.45 Ga 0.55 Sb staggered‐gap tunnel junction intended for high on current and steep subthreshold swing. The first measurements of the transistor transport properties at room temperature and ‐50 °C are provided. Tunneling transport is confirmed by the observation of negative differential resistance in the tunnel junction in the forward bias polarity. Transistor on‐current of 21 μA/μm at 0.3 V and subthreshold swing of 830 mV/decade is found. The large subthreshold swing is consistent with the large density of interface traps at the oxide/semiconductor interface (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)