Patrick Fay

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.2K citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang et al. · Nature · 2022 · 320 citations · Full text

Oxide Heterostructures, Electrical Engineering, Engineering +5

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 254 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

Tom Zimmermann, David A. Deen, Yu Cao et al. · IEEE Electron Device Letters · 2008 · 173 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11