Xiang Gao

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 254 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown

Zongyang Hu, Kazuki Nomoto, Bo Song et al. · Applied Physics Letters · 2015 · 190 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

InAlN/GaN HEMTs With AlGaN Back Barriers

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 173 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 155 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10