InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo, +13

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +9

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo, +3

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics +10

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Hyung‐Seok Lee, Daniel Piedra, Min Sun, +3

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics +10

Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz

Michael L. Schuette, A. Ketterson, Bo Song, +9

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringD-mode Devices +9

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo, +12

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics +9

Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio

Ronghua Wang, P. Saunier, Yong Tang, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorEngineeringGate Recess ProcessQuantum EngineeringSemiconductors +15

Ion-beam-produced damage and its stability in AlN films

S. O. Kucheyev, J. S. Williams, Jin Zou, +5

Journal of Applied Physics

Materials ScienceMaterials EngineeringAln FilmsIon ImplantationEngineering +11

Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

M. C. Tamargo, W. Lin, Shiping Guo, +3

Journal of Crystal Growth

White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering +10

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Wei Guo, Haiding Sun, Bruno Torre, +11

Advanced Functional Materials

Materials ScienceSemiconductorsSolid-state LightingLateral‐polarity StructureEngineering +13

Structural disorder in ion-implanted AlxGa1−xN

S. O. Kucheyev, J. S. Williams, Jin Zou, +6

Applied Physics Letters

Materials ScienceMaterials EngineeringIon ImplantationAluminium NitrideEngineering +10