Shiping Guo

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 254 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Hyung‐Seok Lee, Daniel Piedra, Min Sun et al. · IEEE Electron Device Letters · 2012 · 145 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz

Michael L. Schuette, A. Ketterson, Bo Song et al. · IEEE Electron Device Letters · 2013 · 106 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · Japanese Journal of Applied Physics · 2013 · 89 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11