Michael L. Schuette

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz

Michael L. Schuette, A. Ketterson, Bo Song et al. · IEEE Electron Device Letters · 2013 · 106 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications

P. Saunier, Michael L. Schuette, Tso-Min Chou et al. · IEEE Transactions on Electron Devices · 2013 · 52 citations

Wide-bandgap Semiconductor, Engineering, V Bias +17

Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing

Hyeongnam Kim, Michael L. Schuette, Hyunchul Jung et al. · Applied Physics Letters · 2006 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13