Hyeongnam Kim

Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing

Hyeongnam Kim, Jaesun Lee, Dongmin Liu et al. · Applied Physics Letters · 2005 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Zhaojun Lin, Hyeongnam Kim, Jaesun Lee et al. · Applied Physics Letters · 2004 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing

Hyeongnam Kim, Michael L. Schuette, Hyunchul Jung et al. · Applied Physics Letters · 2006 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface

Hyeongnam Kim, Daewon Kim, Gyuyul Lee et al. · Solar Energy Materials and Solar Cells · 2002 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +17

Post-annealing effects on device performance of AlGaN/GaN HFETs

Jaesun Lee, Dongmin Liu, Hyeongnam Kim et al. · Solid-State Electronics · 2004 · 45 citations

Engineering, Materials Engineering, Materials Science +15