Dong Seup Lee

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 254 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

InAlN/GaN HEMTs With AlGaN Back Barriers

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 173 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Dong Seup Lee, Jinwook Chung, Han Wang et al. · IEEE Electron Device Letters · 2011 · 155 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

GaN high electron mobility transistors for sub-millimeter wave applications

Dong Seup Lee, Zhihong Liu, Tomás Palacios · Japanese Journal of Applied Physics · 2014 · 76 citations · Full text

Electrical Engineering, Engineering, Gan Hemts +13