Dong Seup Lee

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 257 citations

Engineering, Electrical Engineering, Materials Science +16

InAlN/GaN HEMTs With AlGaN Back Barriers

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 176 citations

Engineering, Electrical Engineering, Materials Science +17

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Dong Seup Lee, Jinwook Chung, Han Wang et al. · IEEE Electron Device Letters · 2011 · 156 citations

Engineering, Electrical Engineering, Physics +17

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

Hyung‐Seok Lee, Dong Seup Lee, Tomás Palacios · IEEE Electron Device Letters · 2011 · 138 citations

Engineering, Electrical Engineering, Materials Science +17

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 119 citations

Engineering, Electrical Engineering, Materials Science +17