Shiping Guo

InAlN/GaN HEMTs With AlGaN Back Barriers

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 176 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 158 citations

Engineering, Electrical Engineering, Materials Science +15

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Dong Seup Lee, Jinwook Chung, Han Wang et al. · IEEE Electron Device Letters · 2011 · 156 citations

Engineering, Electrical Engineering, Physics +17

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 137 citations

Engineering, Electrical Engineering, Materials Science +16

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Antonio Crespo, Mark Bellot, Kelson D. Chabak et al. · IEEE Electron Device Letters · 2009 · 106 citations

Engineering, Electrical Engineering, Materials Science +17