Shiping Guo

InAlN/GaN HEMTs With AlGaN Back Barriers

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 173 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 155 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Dong Seup Lee, Jinwook Chung, Han Wang et al. · IEEE Electron Device Letters · 2011 · 155 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Antonio Crespo, Mark Bellot, Kelson D. Chabak et al. · IEEE Electron Device Letters · 2009 · 105 citations

Alinn/gan Hemt, Maximum Extrinsic Transconductance, Electrical Engineering +13