Antonio Crespo

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Andrew J. Green, Kelson D. Chabak, Eric R. Heller et al. · IEEE Electron Device Letters · 2016 · 560 citations

Natural Sciences, Materials Engineering, Materials Science +8

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 366 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +15

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Gregg H. Jessen, Robert Fitch, J. Gillespie et al. · IEEE Transactions on Electron Devices · 2007 · 334 citations

Engineering, Electrical Engineering, Materials Science +17

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Andrew J. Green, Kelson D. Chabak, M. Baldini et al. · IEEE Electron Device Letters · 2017 · 317 citations

Engineering, Electrical Engineering, Electronic Materials +16

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Kelson D. Chabak, Jonathan P. McCandless, Andrew J. Green et al. · IEEE Electron Device Letters · 2017 · 259 citations

Engineering, Electrical Engineering, Materials Engineering +17