Neil Moser

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 366 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +15

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev et al. · Applied Physics Letters · 2017 · 170 citations

Natural Sciences, Materials Engineering, Materials Science +17

Lateral β-Ga₂O₃ field effect transistors

Kelson D. Chabak, Kevin Leedy, Andrew J. Green et al. · Semiconductor Science and Technology · 2019 · 121 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High pulsed current density <i>β</i>-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Neil Moser, Jonathan P. McCandless, Antonio Crespo et al. · Applied Physics Letters · 2017 · 90 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

Andrew J. Green, Neil Moser, Nicholas C. Miller et al. · IEEE Electron Device Letters · 2020 · 82 citations · Full text

Engineering, Electrical Engineering, Materials Science +17