Jonathan P. McCandless

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 359 citations · Full text

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Andrew J. Green, Kelson D. Chabak, M. Baldini et al. · IEEE Electron Device Letters · 2017 · 308 citations

Rf Devices, Electrical Engineering, Engineering +11

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Kelson D. Chabak, Jonathan P. McCandless, Neil Moser et al. · IEEE Electron Device Letters · 2017 · 249 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

Neil Moser, Jonathan P. McCandless, Antonio Crespo et al. · IEEE Electron Device Letters · 2017 · 222 citations

Materials Science, Semiconductors, Electrical Engineering +12

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev et al. · Applied Physics Letters · 2017 · 167 citations

Engineering, Laser Deposition, Optoelectronic Devices +17