Jonathan P. McCandless

Author

Also Known As

J. McCandless, J. P. McCandless, J.P. McCandless, Jon P. McCandless, Jonathan McCandless, Jonathan Mccandless, Jonathan P. McCandless, McCandless, J. P., McCandless, Jon P., McCandless, Jonathan

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Cornell University United States Air Force Research Laboratory Leibniz Institute for Crystal Growth Wyle (United States)George Mason University

About

Jonathan P. McCandless is an author at Cornell University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	1.4K
2	Applied Physics	14	16	1.3K
3	Electrical Engineering	10	10	991
4	Chemical Engineering	2	2	88
5	Chemistry	2	2	35

Jonathan P. McCandless

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage Kelson D. Chabak, Neil Moser, Andrew J. Green, Applied Physics Letters	2016	359
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation Andrew J. Green, Kelson D. Chabak, M. Baldini, IEEE Electron Device Letters Rf DevicesElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2017	308
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs Kelson D. Chabak, Jonathan P. McCandless, Neil Moser, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2017	249
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Neil Moser, Jonathan P. McCandless, Antonio Crespo, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesGe-doped Channel Devices	2017	222
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev, Applied Physics Letters EngineeringLaser DepositionOptoelectronic DevicesThin Film Process TechnologySemiconductors	2017	167
High pulsed current density <i>β</i>-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge Neil Moser, Jonathan P. McCandless, Antonio Crespo, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceInterface ChargeEngineering	2017	87
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, APL Materials Materials ScienceOxide HeterostructuresChemical EngineeringMolecular-beam EpitaxyEngineering	2021	70
Thermal stability of epitaxial <i>α</i>-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire Jonathan P. McCandless, Celesta S. Chang, Kazuki Nomoto, Applied Physics Letters Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringM-plane Sapphire	2021	62
Silicon-doped <i>β</i>-Ga2O3 films grown at 1 <i>µ</i>m/h by suboxide molecular-beam epitaxy Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, APL Materials	2023	49
Controlled Si doping of <b> <i>β</i> </b>-Ga2O3 by molecular beam epitaxy Jonathan P. McCandless, Vladimir Protasenko, Bradley Morell, Applied Physics Letters Oxide HeterostructuresMaterials EngineeringSemiconductorsMaterials ScienceElectrical Engineering	2022	40

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