M. Baldini - Concepedia

Author

M. Baldini

Leibniz Institute for Crystal Growth

Also Known As

Baldini, Michele, M Baldini, M. Baldini, Michele Baldini

Publications

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for Crystal Growth Institute of Materials for Electronics and Magnetism Wyle (United States)Institute of Electrical Engineering of the Slovak Academy of Sciences George Mason University

About

M. Baldini is an author at Leibniz Institute for Crystal Growth specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	16	2.6K
2	Applied Physics	15	16	2.6K
3	Chemistry	3	3	294
4	Natural Sciences	1	1	38
5	Chemical Engineering	1	1	38

M. Baldini

Publications

Citations

H-Index

Page 1

	Year	Citations
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub>MOSFETs Andrew J. Green, Kelson D. Chabak, Eric R. Heller, IEEE Electron Device Letters Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringMovpe-grown Sn-doped	2016	550
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage Kelson D. Chabak, Neil Moser, Andrew J. Green, Applied Physics Letters	2016	359
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation Andrew J. Green, Kelson D. Chabak, M. Baldini, IEEE Electron Device Letters Rf DevicesElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2017	308
Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub>Layers Grown by MOVPE on (010)-Oriented Substrates M. Baldini, M. Albrecht, Andreas Fiedler, ECS Journal of Solid State Science and Technology SemiconductorsMaterials ScienceOxide HeterostructuresMovpe ReactorEngineering	2016	273
Recent progress in the growth of β-Ga2O3 for power electronics applications M. Baldini, Zbigniew Galazka, G. Wagner Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringEngineeringPower Electronics ApplicationsOxide Electronics	2017	249
Homoepitaxial growth of β‐Ga<sub>2</sub>O<sub>3</sub> layers by metal‐organic vapor phase epitaxy Guenter Wagner, M. Baldini, D. Gogova, physica status solidi (a) Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringO 3	2013	204
Electrical compensation by Ga vacancies in Ga2O3 thin films E. Korhonen, Filip Tuomisto, D. Gogova, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringPositron Annihilation Spectroscopy	2015	191
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D. Gogova, G. Wagner, M. Baldini, Journal of Crystal Growth Materials EngineeringOxide HeterostructuresMaterials ScienceEngineeringOxide Electronics	2013	167
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M. Baldini, M. Albrecht, Andreas Fiedler, Journal of Materials Science Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringOxide Electronics	2015	151
Epitaxial stabilization of pseudomorphic α-Ga<sub>2</sub>O<sub>3</sub>on sapphire (0001) Robert Schewski, G. Wagner, M. Baldini, Applied Physics Express Materials ScienceOxide HeterostructuresEpitaxial StabilizationEngineeringPhysics	2014	139

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