M. Baldini

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Andrew J. Green, Kelson D. Chabak, Eric R. Heller et al. · IEEE Electron Device Letters · 2016 · 550 citations

Materials Engineering, Materials Science, Epitaxial Growth +15

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 359 citations · Full text

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Andrew J. Green, Kelson D. Chabak, M. Baldini et al. · IEEE Electron Device Letters · 2017 · 308 citations

Rf Devices, Electrical Engineering, Engineering +11

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga₂O₃Layers Grown by MOVPE on (010)-Oriented Substrates

M. Baldini, M. Albrecht, Andreas Fiedler et al. · ECS Journal of Solid State Science and Technology · 2016 · 273 citations · Full text

Semiconductors, Materials Science, Oxide Heterostructures +13

Recent progress in the growth of β-Ga2O3 for power electronics applications

M. Baldini, Zbigniew Galazka, G. Wagner · Materials Science in Semiconductor Processing · 2017 · 249 citations

Materials Science, Electrical Engineering, Engineering +5