G. Wagner - Concepedia

Author

G. Wagner

Also Known As

G WAGNER, G Wagner, G. A Wagner, G. A. Wagner, G. Wagner, G.A Wagner, G.A. Wagner, Gunter A. Wagner, Gunter Wagner, Günter A. Wagner

160

Publications

5.9K

Citations

H-Index

Concepts

All Affiliations

Leibniz Institute for Crystal Growth Friedrich-Alexander-Universität Erlangen-Nürnberg Humboldt-Universität zu Berlin University of Florence University of Perugia

About

G. Wagner is an author at Leibniz Institute for Crystal Growth specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	62	4.6K
2	Applied Physics	30	54	3.8K
3	Natural Sciences	10	10	499
4	Health Sciences	1	1	148
5	Biology	1	1	148

G. Wagner

Publications

5.4K

Citations

H-Index

Page 1

	Year	Citations
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub>MOSFETs Andrew J. Green, Kelson D. Chabak, Eric R. Heller, IEEE Electron Device Letters Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringMovpe-grown Sn-doped	2016	550
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage Kelson D. Chabak, Neil Moser, Andrew J. Green, Applied Physics Letters	2016	359
Cooling ages derived by apatite fission track, mica Rb-Sr and K-Ar dating : The uplift and cooling history of the Central Alps G. Wagner Medical Entomology and Zoology EngineeringGeographyGeologyGeochemistryK-ar Dating	1977	324
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation Andrew J. Green, Kelson D. Chabak, M. Baldini, IEEE Electron Device Letters Rf DevicesElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2017	308
Fission track tectonics: The tectonic interpretation of fission track apatite ages G. Wagner, G.M. Reimer Earth and Planetary Science Letters EngineeringQuaternary Tectonic DeformationFission Track TectonicsGeologyTectonic Interpretation	1972	290
Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub>Layers Grown by MOVPE on (010)-Oriented Substrates M. Baldini, M. Albrecht, Andreas Fiedler, ECS Journal of Solid State Science and Technology SemiconductorsMaterials ScienceOxide HeterostructuresMovpe ReactorEngineering	2016	273
Recent progress in the growth of β-Ga2O3 for power electronics applications M. Baldini, Zbigniew Galazka, G. Wagner Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringEngineeringPower Electronics ApplicationsOxide Electronics	2017	249
Electrical compensation by Ga vacancies in Ga2O3 thin films E. Korhonen, Filip Tuomisto, D. Gogova, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringPositron Annihilation Spectroscopy	2015	191
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M. Baldini, M. Albrecht, Andreas Fiedler, Journal of Materials Science Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringOxide Electronics	2015	151
Activated oxygen in green plants in relation to stress situations E. F. Elstner, G. Wagner, W. Schütz BiologyPlant StressBotanyAbiotic StressNatural Sciences	1988	148

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