Kevin Leedy

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Andrew J. Green, Kelson D. Chabak, Eric R. Heller et al. · IEEE Electron Device Letters · 2016 · 550 citations

Materials Engineering, Materials Science, Epitaxial Growth +15

β-Gallium oxide power electronics

Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 462 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage

Kelson D. Chabak, Neil Moser, Andrew J. Green et al. · Applied Physics Letters · 2016 · 359 citations · Full text

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Andrew J. Green, Kelson D. Chabak, M. Baldini et al. · IEEE Electron Device Letters · 2017 · 308 citations

Rf Devices, Electrical Engineering, Engineering +11

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Kelson D. Chabak, Jonathan P. McCandless, Neil Moser et al. · IEEE Electron Device Letters · 2017 · 249 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13