β-Gallium oxide power electronics

TLDR

Gallium oxide has rapidly matured into a leading ultra‑wide band‑gap semiconductor, prized for its high critical field, tunable conductivity, and melt‑grown bulk growth, positioning it as a promising material for low‑cost, high‑performance power electronics. The roadmap aims to galvanize the community to overcome technical barriers, thereby improving device performance and enabling efficient, high‑power, commercially scalable microelectronic systems based on gallium oxide. The roadmap surveys 15 key topics identified by the active research community, outlining the current state‑of‑the‑art and future challenges.

Abstract

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.