P. Moens

β-Gallium oxide power electronics

Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 506 citations · Full text

Engineering, Materials Engineering, Materials Science +17

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee et al. · IEEE Transactions on Electron Devices · 2017 · 232 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Hot-Carrier Degradation Phenomena in Lateral and Vertical DMOS Transistors

P. Moens, G. Vandenbosch, G. Groeseneken · IEEE Transactions on Electron Devices · 2004 · 136 citations

Engineering, Electrical Engineering, Microelectronics +16

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli et al. · IEEE Transactions on Electron Devices · 2017 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Matteo Meneghini, P. Vanmeerbeek, Riccardo Silvestri et al. · IEEE Transactions on Electron Devices · 2015 · 121 citations

Engineering, Electrical Engineering, Materials Science +17