Isabella Rossetto

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Transactions on Electron Devices · 2014 · 188 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Isabella Rossetto, Matteo Meneghini, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2016 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli et al. · IEEE Transactions on Electron Devices · 2017 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Electron Device Letters · 2016 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability and failure analysis in power GaN-HEMTs: An overview

Matteo Meneghini, Isabella Rossetto, Carlo De Santi et al. · 2017 · 110 citations

Engineering, Electrical Engineering, Materials Science +16