Davide Bisi

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Davide Bisi, Matteo Meneghini, Carlo De Santi et al. · IEEE Transactions on Electron Devices · 2013 · 443 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Transactions on Electron Devices · 2014 · 188 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

Matteo Meneghini, Isabella Rossetto, Davide Bisi et al. · IEEE Electron Device Letters · 2016 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Matteo Meneghini, P. Vanmeerbeek, Riccardo Silvestri et al. · IEEE Transactions on Electron Devices · 2015 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Kinetics of Buffer-Related R<sub>ON</sub>-Increase in GaN-on-Silicon MIS-HEMTs

Davide Bisi, Matteo Meneghini, Fabio Alessio Marino et al. · IEEE Electron Device Letters · 2014 · 109 citations

Engineering, Electrical Engineering, Materials Science +17