Fabio Alessio Marino

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

Fabio Alessio Marino, Nicolas Faralli, Tomás Palacios et al. · IEEE Transactions on Electron Devices · 2009 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Edge Dislocations +11

Kinetics of Buffer-Related R<sub>ON</sub>-Increase in GaN-on-Silicon MIS-HEMTs

Davide Bisi, Matteo Meneghini, Fabio Alessio Marino et al. · IEEE Electron Device Letters · 2014 · 106 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short-Channel GaN and InGaAs HEMTs

Diego Guerra, R. Akis, Fabio Alessio Marino et al. · IEEE Electron Device Letters · 2010 · 45 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Development of a new high holding voltage SCR-based ESD protection structure

Gaudenzio Meneghesso, Augusto Tazzoli, Fabio Alessio Marino et al. · 2008 · 32 citations

Device Modeling, Electrical Engineering, Engineering +11

Figures of merit in high-frequency and high-power GaN HEMTs

Fabio Alessio Marino, Nicolas Faralli, D. K. Ferry et al. · Journal of Physics Conference Series · 2009 · 28 citations · Full text

Electrical Engineering, Engineering, Microwave Device Modeling +14