Tomás Palacios

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Dong Seup Lee, Xiang Gao, Shiping Guo et al. · IEEE Electron Device Letters · 2011 · 257 citations

Engineering, Electrical Engineering, Materials Science +16

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

Yuhao Zhang, Min Sun, Zhihong Liu et al. · IEEE Transactions on Electron Devices · 2013 · 185 citations

Engineering, Electrical Engineering, Materials Engineering +17

GaN-on-Si Vertical Schottky and p-n Diodes

Yuhao Zhang, Min Sun, Daniel Piedra et al. · IEEE Electron Device Letters · 2014 · 182 citations

Engineering, Electrical Engineering, Materials Science +17

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Dong Seup Lee, Jinwook Chung, Han Wang et al. · IEEE Electron Device Letters · 2011 · 156 citations

Engineering, Electrical Engineering, Physics +17

Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride

Amanuel M. Berhane, Kwang‐Yong Jeong, Zoltán Bodrog et al. · Advanced Materials · 2017 · 152 citations · Full text

Engineering, Materials Engineering, Materials Science +13