Daniel Piedra - Concepedia

Author

Daniel Piedra

Massachusetts Institute of Technology

Also Known As

D. Piedra, Daniel Piedra

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology Singapore-MIT Alliance for Research and Technology Columbia University University of Tsukuba Otto-von-Guericke University Magdeburg

About

Daniel Piedra is an author at Massachusetts Institute of Technology specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	25	3.1K
2	Electrical Engineering	21	24	3.1K
3	Applied Physics	19	23	3K
4	Computer Engineering	1	1	73
5	Materials Engineering	1	1	40

Daniel Piedra

Publications

3.2K

Citations

H-Index

Page 1

	Year	Citations
The 2018 GaN power electronics roadmap Hiroshi Amano, Yannick Baines, Edward Beam, Journal of Physics D Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2018	1.2K
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors Yuhao Zhang, Min Sun, Zhihong Liu, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorSelf-consistent Electrothermal SimulationsEngineeringLateral Power TransistorsVertical Mosfets	2013	184
GaN-on-Si Vertical Schottky and p-n Diodes Yuhao Zhang, Min Sun, Daniel Piedra, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2014	179
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2017	175
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Yuhao Zhang, Min Sun, Hiu Yung Wong, IEEE Transactions on Electron Devices Electrical EngineeringGan-on-si Vertical DiodesEngineeringOff-state Leakage CurrentApplied Physics	2015	159
Materials and processing issues in vertical GaN power electronics Jie Hu, Yuhao Zhang, Min Sun, Materials Science in Semiconductor Processing Electrical EngineeringEngineeringApplied PhysicsGan Power DevicePower Electronics	2017	156
3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier Hyung‐Seok Lee, Daniel Piedra, Min Sun, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2012	145
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit Yuhao Zhang, Min Sun, Joshua Perozek, IEEE Electron Device Letters EngineeringSwitching ChargesDevice FomsPower Electronic SystemsPower Electronics	2018	121
1200 V GaN vertical fin power field-effect transistors Yang Zhang, Min Sun, Daniel Piedra, Wide-bandgap SemiconductorRecord PerformanceElectrical EngineeringEngineeringN-gan Layers	2017	113
Trench formation and corner rounding in vertical GaN power devices Yuhao Zhang, Min Sun, Zhihong Liu, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DeviceNanoelectronics	2017	104

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